Welcome to International Journal of Emerging Technologies in Engineering Research (IJETER)

Volume 9, Issue 4, April (2021)

S.No	Title & Authors	Full Text
1	Exploiting the Properties of GaInAsP/GaInAs Based Multi-Junction Solar Cell Mahmud Ahmod, Md. Sharif Uddin, Md. Mahmudul Hasan, Md Shafiqul Islam, Md. Amran Hossen Bhuiyan Abstract - Increasing the conversion efficiency of a multi-junction solar cell is a challenging task. There have been a number of different works that show different ways of improving conversion efficiency. For instance, incorporating GaInAsP,GaInAs and related materials have proven to successful. Despite the recent success, the GaInP/GaAs/InGaAs multi-junction solar cell’s conversion efficiency still not up to the mark. In this context, we studied a GaInAsP based p-i-n solar cell where we used Indium phosphide (InP) as n-type layer with SCAPS-1D simulator. We added an absorption layer GaInAs after GaInAsP. We also added a buffer layer between the window InP and intrinsic type GaInAsP. So the new structure of the solar become n+-InP/n-GaInP/i-GaInAsP/p-GaInAs/p+-GaAs. The solar cell performance is simulated and analyzed carefully using Solar cell Capacitance Simulator (SCAPS-1D). By tuning different physical parameters of the absorber layer of the solar cell including absorber layer thickness, band gap of the quaternary material, the front and back contact of the solar cell. By varying these parameters the performance of the solar cell was analyzed sharply. From the above analysis of this solar cell, we find out the maximum efficiency of 34.70% with fill factor 84.88, Voc 1.0922V and Jsc 37.431929mA/cm2.	Download